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BU4530AW

NXP
Part Number BU4530AW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Object specification Silicon Diffused Power Transistor BU4530AW GENERAL DESCRIPTION Enhanced ...
Datasheet PDF File BU4530AW PDF File

BU4530AW
BU4530AW

Overview
Philips Semiconductors Object specification Silicon Diffused Power Transistor BU4530AW GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers and p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 TYP.
10 8 t.
b.
f t.
b.
f MAX.
1500 800 16 40 125 3.
0 t.
b.
f t.
b.
f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 10.
0 A; IB = 2.
5 A f = 32 kHz f = 90 kHz ICsat = 10.
0 A; f = 32 kHz ICsat = 8 A; f = 90 kHz PINNING - SOT429 PIN 1 2...


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