Silicon Diffused Power Transistor - NXP
Description
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
9.
0 7.
0 0.
4 0.
15 MAX.
1500 800 12 30 45 3.
0 0.
55 UNIT V V A A W V A A µs µs
Ths ≤ 25 ˚C IC = 9.
0 A; IB = 2.
25 A f = 16 kHz f = 70 kHz ICsat = 9.
0 A;f = 16 kHz ICsat = 7.
0 A;f = 70 kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-55 MAX.
1500 800 12 30 8 12 7 45 150 150 UNIT V V A A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP.
35 MAX.
2.
8 UNIT K/W K/W
1 Turn-off current.
October 1998
1
Rev 1.
100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25...
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