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BU4525AL

NXP
Part Number BU4525AL
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525AL GENERAL DESCRIPTION Enhanc...
Datasheet PDF File BU4525AL PDF File

BU4525AL
BU4525AL

Overview
Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525AL GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
8.
0 7.
5 t.
b.
f t.
b.
f MAX.
1500 800 12 30 125 3.
0 t.
b.
f t.
b.
f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 9.
0 A; IB = 2.
25A f= 16 kHz f= 70 kHz ICsat = 9.
0 A; f = 16 kHz ICsat = 7.
5 A; f = 70 kHz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 heat collector sink e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-55 MAX.
1500 800 12 30 8 12 7 125 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 25 ˚C 1 Turn-off current.
January 1998 1 Rev 1.
000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor BU4525AL THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP.
45 MAX.
1.
0 UNIT K/W K/W STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise s...


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