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BU4525AF

NXP
Part Number BU4525AF
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AF GENERAL DESCRIPTION Enhanced...
Datasheet PDF File BU4525AF PDF File

BU4525AF
BU4525AF

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4525AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.
c monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
9.
0 7.
0 0.
4 0.
15 MAX.
1500 800 12 30 45 3.
0 0.
55 UNIT V V A A W V A A µs µs Ths ≤ 25 ˚C IC = 9.
0 A; IB = 2.
25 A f = 16 kHz f = 70 kHz ICsat = 9.
0 A;f = 16 kHz ICsat = 7.
0 A;f = 70 kHz PINNING - SOT199 PIN...


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