Silicon Diffused Power Transistor - NXP
Description
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725AX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.
Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
7.
0 5.
8 MAX.
1700 825 12 30 45 1.
0 6.
5 UNIT V V A A W V A µs
Ths ≤ 25 ˚C IC = 7.
0 A; IB = 1.
75 A f = 16 kHz ICsat = 7.
0 A; f = 16kHz
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-65 MAX.
1700 825 12 30 12 20 200 9 45 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Ths ≤ 25 ˚C
ESD LIMITING VALUES
SYMBOL VC PARAMETER CONDITIONS MIN.
MAX.
10 UNIT kV Electrostatic discharge capacitor voltage Human body model (250 pF, 1.
5 kΩ)
1 Turn-off current.
September 1997
1
Rev 1.
400
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725AX
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink compound with heatsink compound in fre...
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