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BU2520DW

NXP
Part Number BU2520DW
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DW GENERAL DESCRIPTION New gene...
Datasheet PDF File BU2520DW PDF File

BU2520DW
BU2520DW

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.
6 0.
35 MAX.
1500...


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