Silicon Diffused Power Transistor - NXP
Description
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.
4.
5 1.
6 0.
4 MAX.
1500 700 8 15 45 1.
0 2.
0 0.
6 UNIT V V A A W V A V µs
Ths ≤ 25 ˚C IC = 4.
5 A; IB = 1.
12 A IF = 4.
5 A ICsat = 4.
5 A; IB(end) = 1.
1 A
PINNING - SOT399
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN.
-55 MAX.
1500 700 8 15 4 6 100 5 45 150 150 UNIT V V A A A A mA A W ˚C ˚C
average over any 20 ms period Ths ≤ 25 ˚C
1 Turn-off current.
July 1998
1
Rev 2.
500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508DX
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink...
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