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BTS149

Infineon Technologies AG
Part Number BTS149
Manufacturer Infineon Technologies AG
Description Smart Lowside Power Switch
Published Apr 17, 2005
Detailed Description HITFET=BTS 149 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown wit...
Datasheet PDF File BTS149 PDF File

BTS149
BTS149


Overview
HITFET=BTS 149 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 30 19 V mΩ A A 6000 mJ limitation • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology.
Fully protected by embedded protected functions.
V bb + LOAD M D rain 2 1 IN dv /d t lim ita tio n C u rre n t lim ita tio n O ve rvoltag e p rotection ESD O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit p protection ro te ctio n S o u rce 3 H IT F E T Page 1 2004-02-02 BTS 149 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.
2V ≤ VIN ≤ 10V VIN < -0.
2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.
7 and EOS/ESD assn.
standard S5.
1 - 1993 Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA =13.
5 V td = 400 ms, RI = 2 Ω, ID =0,5*19A td = 400 ms, RI = 2 Ω, ID = 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 110 92 E 40/150/56 3000 V EAS 6000 mJ Tj Tstg Ptot Symbol VDS VDS(SC) IIN no limit | IIN | ≤ 2 - 40 .
.
.
+150 - 55 .
.
.
+150 178 W °C Value 60 32 mA Unit V Thermal resistance junctio...


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