DatasheetsPDF.com

BTS140A

Infineon Technologies AG
Part Number BTS140A
Manufacturer Infineon Technologies AG
Description TEMPFET
Published Apr 17, 2005
Detailed Description TEMPFET® BTS 140 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The dr...
Datasheet PDF File BTS140A PDF File

BTS140A
BTS140A



Overview
TEMPFET® BTS 140 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 140A VDS 50 V ID 42 A RDS(on) 0.
028 Ω Package TO-220AB Ordering Code C67078-S5011-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 65 °C ISO drain current TC = 85° C, VGS = 10 V, VDS = 0.
5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 20 42 13.
5 168 80 1200 125 – 55 .
.
.
+ 150 E 55/150/56 K/W ≤ 1.
0 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 .
.
.
+ 150 °C Short circuit dissipation, Tj = – 55 .
.
.
+ 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1 04.
97 TEMPFET® BTS 140 A Electrical Characteristics at Tj = 25 °C, unless otherwise specified.
Parameter Symbol min.
Static Characteristics Drain-source breakdown voltage Values typ.
max.
Unit V(BR)DSS 50 – 3.
0 – 3.
5 V VGS = 0, ID = 0.
25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =32 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 32 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz VGS(th) 2.
5 I DSS – – 0.
1 10 1.
0 100 µA I GSS – – 10 2.
0 0.
024 100 4.
0 0.
028 nA µA Ω – RDS(on) gfs 12 26 1800 800 280 35 85 220 140 – S pF – 2400 1200 450 50 130 280 180 ns Ciss Coss – Crss – – – – – Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)