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BTA204W-500E

NXP
Part Number BTA204W-500E
Manufacturer NXP
Published Apr 17, 2005
Description Three quadrant triacs guaranteed commutation
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BTA204W series D, E and F Three quadrant triacs guaranteed commutation Product spec...
Datasheet PDF File BTA204W-500E PDF File

BTA204W-500E
BTA204W-500E


Overview
DISCRETE SEMICONDUCTORS DATA SHEET BTA204W series D, E and F Three quadrant triacs guaranteed commutation Product specification December 1998 Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting, intended for use in motor control circuits or with other highly inductive loads.
These devices balance the requirements of commutation performance and gate sensitivity.
The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers.
BTA204W series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER BTA204WBTA204WBTA204WVDRM IT(RMS) ITSM Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX.
MAX.
500D 500E 500F 500 1 10 600D 600E 600F 600 1 10 MAX.
UNIT 800E 800F 800 1 10 V A A PINNING - SOT223 PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION 4 SYMBOL T2 main terminal 2 gate main terminal 2 1 2 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tsp ≤ 108 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 1.
5 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs CONDITIONS MIN.
-500 5001 MAX.
-600 6001 1 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 10 11 0.
5 100 2 5 5 0.
5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise o...


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