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BTA204W-500B

NXP
Part Number BTA204W-500B
Manufacturer NXP
Published Apr 17, 2005
Description Three quadrant triacs high commutation
Detailed Description Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Passivated hig...
Datasheet PDF File BTA204W-500B PDF File

BTA204W-500B
BTA204W-500B


Overview
Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Passivated high commutation triacs in a plastic envelope suitable for surface mounting intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated rms current at the maximum rated junction temperature without the aid of a snubber.
BTA204W series B and C QUICK REFERENCE DATA SYMBOL PARAMETER MAX.
MAX.
600B 600C 600 1 10 MAX.
UNIT 800B 800C 800 1 10 BTA204W- 500B BTA204W- 500C Repetitive peak 500 off-state voltages RMS on-state current 1 Non-repetitive peak on-state 10 current VDRM IT(RMS) ITSM V A A PINNING - SOT223 PIN 1 2 3 tab DESCRIPTION main terminal 1 PIN CONFIGURATION 4 SYMBOL T2 main terminal 2 gate main terminal 2 1 2 3 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tsp ≤ 108 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.
7 ms t = 10 ms ITM = 1.
5 A; IG = 0.
2 A; dIG/dt = 0.
2 A/µs CONDITIONS MIN.
-500 5001 MAX.
-600 6001 1 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 10 11 0.
5 100 2 5 5 0.
5 150 125 A A A2s A/µs A V W W ˚C ˚C over any 20 ms period -40 - 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state.
The rate of rise of current should not exceed 6 A/µs.
December 1998 1 Rev 1.
000 Philips Semiconductors Product specification Three quadrant triacs high commutation THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a PARAMETER Thermal resistance junction to solder point Thermal resis...


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