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Q62702-C2376

Part Number	Q62702-C2376
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon Digital Transistor Array (Switching circuit/ inverter/ interface circuit/ driver circuit)
Published	Apr 16, 2005
Detailed Description	BCR 133S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (ga...
Datasheet	Q62702-C2376 PDF File

Overview

BCR 133S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistors (R1=10kΩ, R2=10kΩ) Type BCR 133S Marking Ordering Code Pin Configuration WCs Package Q62702-C2376 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 20 100 250 150 - 65 .
.
.
+ 150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 275 ≤ 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown v...

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