NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit) - Siemens Semiconductor Group
Description
BCR 116
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.
7kΩ, R2=47kΩ)
Type BCR 116
Marking Ordering Code WGs Q62702-C2337
Pin Configuration 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102°C Junction temperature Storage temperature Symbol Values 50 50 5 15 100 200 150 - 65 .
.
.
+ 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 350 ≤ 240
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm2 Cu
Semiconductor Group
1
Dec-18-1996
BCR 116
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit
V(BR)CEO
50 4.
7 0.
1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA µA 155 70 V 0.
3 0.
8 1.
4 6.
2 0.
11 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.
4
VEB = 5 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.
5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
0.
5
IC = 2 mA, VCE = 0.
3 V
Input resistor Resistor ratio
R1 R1/R2
3.
2 0.
09
AC Characteristics Transition frequency
fT
160 3 -
MHz pF -
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
2
Dec-18-1996
BCR 116
DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration)
Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20
10 3
10 2
-
hFE
10 2
IC
mA
10 1
10 1
10 0 -1 10
10
0
10
1
mA
10 0 0.
0
0.
2
0.
4
0.
6
V
IC
1.
0 V CEsat
Input on Voltage Vi(on) = f(IC) VCE = 0.
3V (comm...
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