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Q62702-C2328

Part Number	Q62702-C2328
Manufacturer	Siemens Semiconductor Group
Published	Apr 16, 2005
Description	PNP Silicon AF Transistor (For general AF applications High collector current High current gain)
Detailed Description	BC 807-16W PNP Silicon AF Transistor • For general AF application
Datasheet	Q62702-C2328 PDF File

Overview

BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN) Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering Code 5As 5Bs 5Cs 5Es 5Fs 5Gs Q62702-C2325 Q62702-C2326 Q62702-C2327 Q62702-C2328 Q62702-C2329 Q62702-C2330 Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 Maximum Ratings Parameter Collector-emitter voltage BC 807 W BC 808 W Collector-base voltage BC 807 W BC 808 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130°C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 25 Unit V VCEO VCBO 50 30 VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS 1 5 500 1 100 250 150 - 65 .
.
.
+ 150 ≤ 215 ≤ 80 mA A mA mW °C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group Dec-19-1996 BC 807-16W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 45 25 160 250 350 100 50 100 V IC = 10 mA, IB = 0 , BC 807 W IC = 10 mA, IB = 0 , BC 808 W Collector-base breakdown voltage V(BR)CBO 50 30 IC = 10 µA, IB = 0 , BC 807 W IC = 10 µA, IB = 0 , BC 808 W Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 µA, IC = 0 Collector-base cutoff current ICBO nA µA nA 100 160 250 60 100 170 250 400 630 V 0.
7 1.
2 VCB = 25 V, TA = 25 °C VCB = 25 V, TA = 150 °C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 100 mA, VCE = 1 V, BC .
.
.
16 W IC = 100 mA, VCE = 1 V, BC .
.
.
25 W IC = 100 mA, VCE = 1 V, BC .
.
.
40 W IC = 300 mA, VCE = 1 V, BC .
.
.
16 W IC = 300 mA, VCE = 1 V, BC .
.
.
25 W IC = 300 mA, VCE = 1 V, BC .
.
.
4...

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