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Q62702-C2257

Siemens Semiconductor Group
Part Number Q62702-C2257
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
Published Apr 16, 2005
Detailed Description BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias ...
Datasheet PDF File Q62702-C2257 PDF File

Q62702-C2257
Q62702-C2257


Overview
BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor ( R1 =10kΩ , R2=47kΩ ) Type BCR 135 Marking WJs Ordering Code Q62702-C2257 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 150 65.
.
.
+150 mA mW °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.
5mm / 6cm 2 Cu Semiconductor Group 1 Jun-18-1997 BCR 135 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min.
Values typ.
10 0.
21 max.
100 167 0.
3 1 1.
4 13 0.
24 kΩ nA µA V V Unit V(BR)CEO V(BR)CBO ICBO IEBO hFE VCEsat Vi(off) Vi(on) R1 R1/R2 50 50 70 0.
5 0.
5 7 0.
19 IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor Resistor ratio AC Characteristics Transition frequency fT Ccb - 150 3 - MHz pF IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300 µs; D < 2% Semiconductor Group 2 Jun-18-1997 BCR 135 DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC ), hFE = 20 10 2 mA h FE 10 2 IC 10 1 10 1 10 0 10 -1 10 0 10 1 mA 10 0 0.
0 0.
2 0.
4 0.
6 V 1.
0 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage V...


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