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Q62702-C2136

Part Number	Q62702-C2136
Manufacturer	Siemens Semiconductor Group
Description	NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
Published	Apr 16, 2005
Detailed Description	NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications q High collector current q High current g...
Datasheet	Q62702-C2136 PDF File

Overview

NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications q High collector current q High current gain q Complementary types: BCP 28/48 (PNP) q Type BCP 29 BCP 49 Marking BCP 29 BCP 49 Ordering Code (tape and reel) Q62702-C2136 Q62702-C2137 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BCP 49 BCP 29 30 40 10 60 80 10 500 800 100 200 1.
5 150 – 65 … + 150 Unit V mA W ˚C Rth JA Rth JS ≤ ≤ 75 17 K/W For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 BCP 29 BCP 49 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP 29 BCP 49 Collector-base breakdown voltage IC = 100 µA, IB = 0 BCP 29 BCP 49 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C VCB = 60 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V Collector-emitter saturation voltage IC = 100 mA, IB = 0.
1 mA Base-emitter saturation voltage IC = 100 mA, IB = 0.
1 mA BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 VCEsat VBEsat BCP 29 BCP 49 BCP 29 BCP 49 IEB0 hFE 4000 2000 10000 4000 20000 10000 4000 2000 – – – – – – – – – – – – – – – – – – – – 1.
0 1.
5 V V(BR)EB0 ICB0 – – – – – – – – – – 100 100 10 10 100 nA nA µA µA nA – V(BR)CE0 30 60 V(BR)CB0 40 80 10 – – – – – – – – – – V Va...

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