Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) - Siemens Semiconductor Group
Description
Silicon PIN Diodes
BAR 60 BAR 61
q q
RF switch RF attenuator for frequencies above 10 MHz
Type BAR 60
Marking 60
Ordering Code (tape and reel) Q62702-A786
Pin Configuration
Package1) SOT-143
BAR 61
61
Q62702-A120
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 65 ˚C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point
1) 2)
Symbol VR IF Ptot Tj Tstg Top
Values 100 140 250 150 – 55 … + 150 – 55 … + 150
Unit V mA mW ˚C
Rth JA Rth JS
≤ ≤
580 340
K/W
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
Semiconductor Group
1
07.
94
BAR 60 BAR 61
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC/AC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Zero bias conductance VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Differential forward resistance f = 100 MHz, IF = 0.
01 mA IF = 0.
1 mA IF = 1.
0 mA IF = 10 mA IR – – VF CT – – gp
τL
Values typ.
max.
Unit
– – –
100 1 1.
25
nA µA V pF
–
0.
25 0.
2 50 1
0.
5 – – –
µS µs
– –
rf – – – – 2800 380 45 7 – – – –
Ω
Semiconductor Group
2
BAR 60 BAR 61
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina
Forward resistance rf = f (IF) f = 100 MHz
Diode capacitance CT = f (VR)
Semiconductor Group
3
BAR 60 BAR 61
Application circuit for attenuation networks with diode BAR 60
Application circuit for attenuation networks with diode BAR 61
Semiconductor Group
4
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