Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) - Siemens Semiconductor Group
Description
Silicon Switching Diodes
BAW 79 A … BAW 79 D
For high-speed switching q High breakdown voltage q Common cathode
q
Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D
Marking GE GF GG GH
Ordering Code (tape and reel) Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
Pin Configuration
Package1) SOT-89
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 115 ˚C Junction temperature Symbol BAW VR VRM IF IFM IFS Ptot Tj 50 50 Values BAW BAW 100 100 1 1 10 1 150 – 65 … + 150 W ˚C 200 200 Unit BAW 400 400 A V
Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
175 35
K/W
1) 2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group
1
5.
91
BAW 79 A … BAW 79 D
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Breakdown voltage I(BR) = 100 µA BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for reverse recovery time CD trr – – 10 1 – – pF
µs
Values typ.
max.
Unit
V(BR) 50 100 200 400 VF – – IR – – – – 1 50 – – 1.
6 2 – – – – – – – –
V
V
µA
Pulse generator: tp = 5 µs, D = 0.
05 tr = 0.
6 ns, Rj = 50 Ω
Oscillograph:
R = 50 Ω tr = 0.
35 ns C ≤ 1 pF
1)
Pulse test: tp ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BAW 79 A … BAW 79 D
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Forward current IF = f (VF) TA = 25 ˚C
Peak forward current IFM = f (t) TA = 25 ˚C
Reverse current IR = f (TA) VR = VRmax
Semiconductor Group
3
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