Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) - Siemens Semiconductor Group
Description
BAS 70-06S
Silicon Schottky Diode Array • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment
4 5 6
2 1
3
VPS05604
Type BAS 70-06S
Marking Ordering Code 76s Q62702-A3469
Pin Configuration 1/4=C1 2/5=C2
Package 3/6=A1/A2SOT-363
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S ≤ 72 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 70 70 100 250 150 - 55 .
.
.
+150 - 55 .
.
.
+150
Unit V mA mW °C
VR IF IFSM Ptot Tj Top Tstg
RthJA RthJS
≤ 545 ≤ 310
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.
5mm / 0.
5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
BAS 70-06S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Breakdown voltage typ.
max.
-
Unit
V(BR) IR
70
V µA
I (BR) = 10 µA
Reverse current
VR = 50 V VR = 70 V
Forward voltage
-
375 705 880
0.
1 10 mV 410 750 1000
VF
300 600 750
I F = 1 mA I F = 10 mA I F = 15 mA
AC characteristics Diode capacitance
CT
τ
-
1.
6 30
2 100 -
pF ps Ω
VR = 0 V, f = 1 MHz
Charge carrier life time
I F = 25 mA
Differential forward resistance
rf
I F = 10 mA, f = 100 MHz
Semiconductor Group Semiconductor Group
22
Sep-07-1998 1998-11-01
BAS 70-06S
Forward current IF = f (TA*;TS) * Package mounted on epoxy
100
mA
IF
60
TS TA
40
20
0 0
20
40
60
80
100
120 °C
150
TA,TS
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 3 10 2
K/W
IFmax / IFDC
-
RthJS
10 2
10 1
0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0
10 1
D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Semiconduc...
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