Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) - Siemens Semiconductor Group
Description
BAS 70-04S
Silicon Schottky Diode Array • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing
4 5 6
2 1
3
VPS05604
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70-04S Marking Ordering Code 74s Q62702-A3468 Pin Configuration 1/4=A1 2/5=C2 Package 3/6=C1/A2 SOT-363
Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t < 100µs) Total power dissipation, T S ≤ 97°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 70 70 100 250 150 -55.
.
.
+150 -55.
.
.
+150
Unit V mA mW °C
VR IF IFSM Ptot Tj Top Tstg
RthJA RthJS
≤ 445 ≤ 210
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
BAS 70-04S
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
DC characteristics Breakdown voltage typ.
max.
-
Unit
V(BR) IR
70
V µA
I (BR) = 10 µA
Reverse current
VR = 50 V VR = 70 V
Forward voltage
-
375 705 880
0.
1 10 mV 410 750 1000
VF
300 600 750
I F = 1 mA I F = 10 mA I F = 15 mA
AC characteristics Diode capacitance
CT
τ
-
1.
6 30
2 100 -
pF ps Ω
VR = 0 V, f = 1 MHz
Charge carrier life time
I F = 25 mA
Forward resistance
rf
I F = 10 mA, f = 10 kHz
Semiconductor Group Semiconductor Group
22
Sep-07-1998 1998-11-01
BAS 70-04S
Forward current IF = f (V F)
Reverse current IR = f (VR)
T A = Parameter
10 2
BAS 70W/BAS 170W EHB00042
TA = Parameter
10 2
BAS 70W/BAS 170W EHB00043
ΙF
mA 10 1
ΙR
µA 10 1
TA = 150 C
10 0
85 C
10 0
10 -1
TA = -40 C 25 C 85 C 150 C
10 -1
10 -2
25 C
10 -2
0.
0
0.
5
1.
0
V
1.
5
10 -3
0
20
40
60
V
80
VF
VR
Diode capacitance CT = f (V R) f = 1MHz
BAS 70W/BAS 170W EHB00044
Differential forward resistance rf = f (IF) f = 10 kHz
2.
0
10 3
BAS 70W/BAS ...
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