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Q62702-A3466

Siemens Semiconductor Group

Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) - Siemens Semiconductor Group


Q62702-A3466
Q62702-A3466

PDF File Q62702-A3466 PDF File



Description
BAS 28W Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes 3 4 2 1 VPS05605 Type BAS 28W Marking Ordering Code JTs Q62702-A3466 Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 103 °C Junction temperature Storage temperature Symbol Value 75 85 200 4.
5 250 150 - 65 .
.
.
+150 mA A mW °C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 460 ≤ 190 K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group Semiconductor Group 11 Mar-16-1998 1998-11-01 BAS 28W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Breakdown voltage typ.
max.
- Unit V(BR) VF 85 V mV I (BR) = 10 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 1 µA IR IR - VR = 75 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD trr - - 2 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.
U.
T.
ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.
05, t r = 0.
6ns, R i = 50Ω Oscillograph: R = 50Ω, tr = 0.
35ns, C ≤ 1pF Semiconductor Group Semiconductor Group 22 Mar-16-1998 1998-11-01 BAS 28W Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f V F) TA = 25°C BAS 28 EHB00035 300 5 150 ΙF mA mA 200 IF TS 150 100 typ max TA 100 50 50 0 0 20 40 60 80 100 120 °C 150 0 0 0.
5 1.
0 V 1.
5 TA,TS VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 ...



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