Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package) - Siemens Semiconductor Group
Description
BAV 99S
Silicon Switching Diode Array • For high-speed switching applications • Connected in series • Internal (galvanic) isolated Diodes in one package
4 5 6
2 1
3
VPS05604
Type BAV 99S
Marking Ordering Code A7s Q62702-A1277
Pin Configuration
Package
1/4 = A1 2/5 = C2 3/6=C1/A2 SOT-363
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 85 °C Junction temperature Storage temperature Symbol Value 70 70 200 4.
5 250 150 65 .
.
.
+150 mA A mW °C Unit V
VR VRM IF I FS Ptot Tj T stg
Thermal Resistance Junction - ambient
1)
RthJA RthJS
≤ 530 ≤ 260
K/W
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.
5mm / 0.
5cm2 Cu Semiconductor Group Semiconductor Group 11
Apr-27-1998 1998-11-01
BAV 99S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Breakdown voltage typ.
max.
-
Unit
V(BR) VF
70
V mV
I (BR) = 100 µA
Forward voltage
I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA
Reverse current
-
-
715 855 1000 1250 2.
5 µA nA
IR IR
-
VR = 70 V
Reverse current
VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C
AC characteristics Diode capacitance
-
-
30 50
CD t rr
-
-
1.
5 6
pF ns
VR = 0 V, f = 1 MHz
Reverse recovery time
I F = 10 mA, I R = 10 mA, R L = 100 Ω,
measured at IR = 1mA
Test circuit for reverse recovery time
D.
U.
T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = 100ns, D = 0.
05, t r = 0.
6ns, R i = 50Ω
Oscillograph: R = 50Ω, tr = 0.
35ns, C ≤ 1pF
Semiconductor Group Semiconductor Group
22
Apr-27-1998 1998-11-01
BAV 99S
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Forward current IF = f V F)
TA = 25°C
BAV 99 EHB00076
300
1
150
mA
Ι F mA
IF
200
100
TS
150
typ
max
TA
100
50
50
0 0
20
40
60
80
100
120 °C
150
0
0
0.
5
1.
0
V
1.
5
TA,TS
VF
Permissible Pulse Load R thJS = f(t p)
Permissible Pulse Load
IFmax / IF...
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