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PZTM1102

NXP
Part Number PZTM1102
Manufacturer NXP
Description PNP transistor/Schottky-diode module
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product sp...
Datasheet PDF File PZTM1102 PDF File

PZTM1102
PZTM1102


Overview
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZTM1102 PNP transistor/Schottky-diode module Product specification File under Discrete Semiconductors, SC01 1996 May 09 Philips Semiconductors Product specification PNP transistor/Schottky-diode module FEATURES • Low output capacitance • Fast switching time • Integrated Schottky protection diode.
handbook, halfpage PZTM1102 DESCRIPTION Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package.
NPN complement: PZTM1101.
4 1 APPLICATIONS • High-speed switching for industrial applications.
2 4 PINNING PIN 1 2 3 4 base emitter collector, anode Schottky DESCRIPTION cathode Schottky Marking code: TM1102.
1 Top view 2 3 MAM237 3 Fig.
1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PNP transistor VCBO VCES VEBO IC VR IF IF(AV) P Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector − − − − − − − up to Tamb = 25 °C; note 1 reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj Notes 1.
An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.
5 W.
2.
It is not allowed to dissipate the total power of 1.
2 W in the Schottky die only.
total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 °C; note 2 − −55 −55 − 1.
2 +150 +150 150 W °C °C °C − − − −40 −40 −6 −200 V V V mA PARAMETER CONDITIONS MIN.
MAX.
UNIT Schottky barrier diode continuous reverse voltage forward current (DC) average forward current power dissipation junction temperature 40 1 1 0.
5 125 150 V A A W °C °C 1996 May 09 2 Philips Semiconductors Product specification PNP transistor/Schottky-diode module ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL NPN transistor V(BR)CBO V(BR)CES V(BR)EBO ICES...


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