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PTF211802A

Infineon Technologies AG
Part Number PTF211802A
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Published Apr 16, 2005
Detailed Description PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally ...
Datasheet PDF File PTF211802A PDF File

PTF211802A
PTF211802A

Overview
PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 2.
0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.
84 MHz BW 35 -30 • • Efficiency (%), Gain (dB) 30 25 20 15 10 -35 IMD (dBc), ACPR (dB) • • • Gain Drain Efficiency IM3 -40 -45 -50 -55 PTF211802A Pa...


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