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PTF210301

Infineon Technologies AG
Part Number PTF210301
Manufacturer Infineon Technologies AG
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
Published Apr 16, 2005
Detailed Description PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally ma...
Datasheet PDF File PTF210301 PDF File

PTF210301
PTF210301

Overview
PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 7.
0 W - Gain = 16 dB - Efficiency = 25% - IM3 = –37 dBc Typical CW performance - Output power at P–1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power Two–Carrier WCDMA Drive–Up f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB, 10 MHz Carrier Spacing, VDD = 28 V, IDQ = 380 mA -25 Efficiency 30 25 • IM3 (dBc), ACPR (dBc) -30 -35 -40 -45 -50 ACPR -55 30 32 34 36 38 40 IM3 • Drain Efficiency (%) 20 15 10 5 0 • • • PTF210301A Package 20265 Average Output Power (...


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