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PTF10162

Part Number	PTF10162
Manufacturer	Ericsson
Published	Apr 16, 2005
Description	18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Detailed Description	PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET inten...
Datasheet	PTF10162 PDF File

Overview

PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz.
It operates at 55% efficiency with 15 dB of gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 26 Volts - Output Power = 18 Watts - Power Gain = 15 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs.
Input Power 24 80 70 Efficiency 60 50 20 Output Power 16 12 8 4 0 0.
0 0.
3 0.
5 0.
8 1.
0 Output Power (Watts) Efficiency (%) A -1 2 1016 3456 2 985 5 VDD = 26 V IDQ = 130 mA f = 960 MHz 40 30 20 Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 14 18 50 — Typ 15 20 55 — Max — — — 5:1 Units dB Watts % — e 1 PTF 10162 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.
5 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 0.
9 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Thermal Resistance (TCASE = 70°C) TSTG RqJC...

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