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PTF10160

Part Number	PTF10160
Manufacturer	Ericsson
Description	85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Published	Apr 16, 2005
Detailed Description	PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–...
Datasheet	PTF10160 PDF File

Overview

PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications.
It operates with 53% efficiency and 16 dB typical gain.
Full gold metallization ensures excellent device lifetime and reliability.
• • INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability • • • • Typical Output Power& Efficiency vs.
Input Power 120 100 70 60 Efficiency 80 60 40 20 Output Power 0 0 1 2 3 4 5 Output Power (Watts) 40 Efficiency (%) 50 VDD = 26 V IDQ = 700 mA f = 960 MHz 30 20 10 0 1234 5600 55A 1016 0 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 700 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gpe P-1dB h Y Min 15 85 50 — Typ 16 90 53 — Max — — — 5:1 Units dB Watts % — e 1 PTF 10160 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 3.
0 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±20 200 ...

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