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PTF10139

Ericsson
Part Number PTF10139
Manufacturer Ericsson
Description 60 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended fo...
Datasheet PDF File PTF10139 PDF File

PTF10139
PTF10139

Overview
PTF 10139 60 Watts, 860-960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz.
This 60–watt device operates at 55% efficiency with 12.
5 dB typical gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 28 Volts - Output Power = 60 Watts Min - Power Gain = 12.
5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability Available in Package 20256 as PTF 10138 • • • • • • Typical Output Power & Efficiency vs.
Input Power 70 Output Power 60 70 Drain Efficiency (%) X 60 Efficiency 50 40 80 Output Power (Watts) 50 40 30 20 10 0 0 1 2 3 4 A-1 234 561 199 101 e 39 Package 20251 VDD = 28 V IDQ = 500 mA f = 960 MHz 30 20 10 Input Power (Watts) Also available in Package 20256 e A-12 1013 3456 8 2700 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 11.
5 60 50 — Typ 12.
5 — 55 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10139 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS IGSS VGS(th) gfs Min 65 — — 3.
0 — Typ — — — — 2.
8 Max — 1.
0 1 5.
0 — Units Volts mA mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter ...


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