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PTF10137

Ericsson
Part Number PTF10137
Manufacturer Ericsson
Description 12 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10137 12 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended f...
Datasheet PDF File PTF10137 PDF File

PTF10137
PTF10137


Overview
PTF 10137 12 Watts, 1.
0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.
0 GHz.
It operates at 60% efficiency with 18 dB of gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 28 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability • • • • Typical Output Power & Efficiency vs.
Input Power 20 Efficiency (%) 80 • Output Power (Watts) 15 60 VDD = 28 V 10 Efficiency IDQ = 160 mA f = 960 MHz Output Power (W) 40 A-1 234 101 37 5 699 42 5 20 0 0.
0 0.
2 0.
4 0.
6 0 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 16.
5 12 55 — Typ 18 15 60 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10137 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.
5 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 0.
9 Max — 1 5.
0 — Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS ...


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