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PTF10136

Ericsson
Part Number PTF10136
Manufacturer Ericsson
Description 6 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6–watt GOLDMOS FET intended fo...
Datasheet PDF File PTF10136 PDF File

PTF10136
PTF10136


Overview
PTF 10136 6 Watts, 1.
0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6–watt GOLDMOS FET intended for large signal amplifier applications from to 1.
0 GHz.
It operates at 57% efficiency with 19 dB typical gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 28 Volts - Output Power = 6 Watts - Efficiency = 57% Typ - Power Gain = 19 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability • • • • Typical Output Power & Efficiency vs.
Input Power 10 Efficiency 70 56 42 Efficiency (%) X • Output Power (Watts) 8 6 4 2 Output Pow er 0 0.
00 0.
05 0.
10 VDD = 28 V IDQ = 70 mA f = 960 MHz 28 14 0 0.
15 A-1 234 569 935 101 36 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 1 W, IDQ = 70 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 70 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 70 mA, f = 960 MHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 18 6.
0 50 — Typ 19 7.
5 57 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10136 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e Min 65 — 3.
0 — Typ — — — 0.
3 Max — 1 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.
5 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS TJ ...


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