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PTF080901

Part Number	PTF080901
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
Published	Apr 16, 2005
Detailed Description	PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matc...
Datasheet	PTF080901 PDF File

Overview

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Features • • Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 120 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power EDGE Modulation Spectrum Performan...

Similar Datasheet

PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz - Infineon Technologies AG
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