DatasheetsPDF.com

PTF080601F

Part Number	PTF080601F
Manufacturer	Infineon Technologies AG
Description	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Published	Apr 16, 2005
Detailed Description	Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, i...
Datasheet	PTF080601F PDF File

Overview

Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.
Output Power VDD = 28 V, IDQ = 550 mA, f = 959.
8 MHz -20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46 Features • • Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 90 W - Gain = 17 dB - Efficien...

Similar Datasheet

PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz - Infineon Technologies AG
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz - Infineon Technologies AG
PTF080601E LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz - Infineon Technologies AG
PTF080601F LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz - Infineon Technologies AG

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)