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PTB20189

Ericsson
Part Number PTB20189
Manufacturer Ericsson
Description UHF TV Linear Power Transistor Cellular Radio RF Power Transistor
Published Apr 16, 2005
Detailed Description e PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor Description The 20189 is an NPN, common emitter RF po...
Datasheet PDF File PTB20189 PDF File

PTB20189
PTB20189


Overview
e PTB 20189 1 Watt, 900–960 MHz Cellular Radio RF Power Transistor Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz.
Rated at 1 watt minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • • • • • 25 Volt, 900–960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power and Efficiency vs.
Input Power 2.
0 80 VCC = 25 V 1.
5 Output Power (Watts) ICQ = 175 mA f = 960 MHz 60 1.
0 40 Efficiency (%) 201 89 LO TC OD E 0.
5 20 0.
0 0.
00 0.
02 0.
04 0.
06 0.
08 0 0.
10 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.
0 0.
5 11 0.
063 –40 to +150 16.
0 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20189 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1.
5 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 28 55 3.
5 20 Typ 32 70 5 50 Max — — — 120 Units Volts Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz—all phase angles at frequency of test) S...


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