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PTB20174

Ericsson
Part Number PTB20174
Manufacturer Ericsson
Description 90 Watts/ 1400-1600 MHz RF Power Transistor
Published Apr 16, 2005
Detailed Description e PTB 20174 90 Watts, 1400–1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transis...
Datasheet PDF File PTB20174 PDF File

PTB20174
PTB20174


Overview
e PTB 20174 90 Watts, 1400–1600 MHz RF Power Transistor Description The 20174 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1400 to 1600 MHz.
Rated at 90 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • Class AB Characteristics Specified 26 Volts, 1490 MHz - Output Power = 90 Watts - IMD at 90 Watts = -28 dBc max.
- Gain at 90 Watts = 7.
5 dB min.
Gold Metallization Silicon Nitride Passivated • • Typical Output Power and Efficiency vs.
Input Power 120 90 VCC = 26 V 100 80 60 40 20 0 0 5 10 15 20 Output Power (Watts) ICQ = 250 mA Total f = 1490 MHz 80 70 60 50 40 30 Efficiency (%) 201 74 LOT COD E Input Power (Watts) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage (collector shorted) Collector-Base Voltage (emitter open) Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCES VCBO VEBO IC PD Value 52 50 4.
0 15 290 1.
67 150 0.
6 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20174 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 21 52 3.
5 20 Typ — 70 5 50 Max — — — 100 Units Volts Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 90 W, ICQ = 250 mA Total, f = 1491 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 90 W, ICQ = 250 mA Total, f = 1491 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 45 W, ICQ = 250 mA Total, f = 1491 MHz—at all phase angles) Symbol Gpe Min 7.
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