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PTB20162

Ericsson
Part Number PTB20162
Manufacturer Ericsson
Description 40 Watts/ 470-900 MHz RF Power Transistor
Published Apr 16, 2005
Detailed Description e PTB 20162 40 Watts, 470–900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor...
Datasheet PDF File PTB20162 PDF File

PTB20162
PTB20162

Overview
e PTB 20162 40 Watts, 470–900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz.
Rated at 40 watts minimum output power, it may be used for both CW and PEP applications.
Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
• • • • • 40 Watts, 470–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power & Efficiency vs.
Input Power 60 50 70 60 50 Output Power (Watts) 40 30 20 10 0 0 1 2 3 4 5 6 7 8 201 62 LOT COD E VCC = 25 V ICQ = 200 mA f = 900 MHz 30 20 10 Efficiency 40 Input Power (Watts) Package 20226 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) TSTG RθJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.
0 10.
0 80 0.
45 –40 to +150 2.
2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 1 9/28/98 PTB 20162 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IB = 0 A, IC = 50 mA, RBE = 22 Ω VBE = 0 V, IC = 50 mA IC = 0 A, IE = 20 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4.
0 20 Typ — — 5 50 Max — — — 100 Units Volts Volts Volts — RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 900 MHz) Power Output at 1 dB Compression (VCC = 25 Vdc, ICQ = 200 mA, f = 900 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 60 mA, f1 = 899 MHz, f2 = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout ...


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