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PTB20080

Part Number	PTB20080
Manufacturer	Ericsson
Description	25 Watts/ 1.6-1.7 GHz RF Power Transistor
Published	Apr 16, 2005
Detailed Description	e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junc...
Datasheet	PTB20080 PDF File

Overview

e PTB 20080 25 Watts, 1.
6–1.
7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.
6 to 1.
7 GHz.
It is rated at 25 Watts minimum output power for PEP applications.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
25 Watts, 1.
6–1.
7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power & Efficiency vs.
Input Power 40 80 30 60 Output Power (Watts) 20 40 VCC = 26 V 10 ICQ = 125 mA f = 1.
65 GH...

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