DatasheetsPDF.com

PTB20079

Part Number	PTB20079
Manufacturer	Ericsson
Description	10 Watts/ 1.6-1.7 GHz INMARSAT RF Power Transistor
Published	Apr 16, 2005
Detailed Description	e PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipol...
Datasheet	PTB20079 PDF File

Overview

e PTB 20079 10 Watts, 1.
6–1.
7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.
6 to 1.
7 GHz frequency band.
It is rated at 10 Watts minimum output power for PEP applications.
Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability.
100% lot traceability is standard.
10 Watts, 1.
6–1.
7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs.
Input Power 16 +24V 14 +26V +22V Output Power (Watts) 12 10 8 6 4...

Similar Datasheet

PTB20003 4 Watts/ 915-960 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20004 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20005 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20006 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20007 30 Watts/ 935-960 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20008 10 Watts/ 935-960 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20009 2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20011 20 Watts P-Sync/ 470-860 MHz UHF TV Linear Power Transistor - Ericsson
PTB20017 150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor - Ericsson
PTB20030 15 Watts/ 420-470 MHz RF Power Transistor - Ericsson

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)