N-Channel 20-V MOSFET - Vishay Siliconix
Description
TN0205A/AD
New Product
Vishay Siliconix
N-Channel 20-V MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
2.
0 @ VGS = 4.
5 V 2.
5 @ VGS = 2.
5 V
ID (mA)
250 150
FEATURES
D D D D Low On-Resistance: 2.
0 Ω Low Threshold: 0.
9 V (typ) Fast Switching Speed: 35 ns 2.
5-V or Lower Operation
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery operated Systems D Solid State Relay D Load/Power Switching-Cell Phones, PDA
SOT-323
SC-70 (3-Leads) G 1 3 S 2 Order Number: TN0205A D S1 G1 D2 1 2 3
SOT-363
SC-70 (6-Leads)
6 5 4
D1 G2 S2
Marking Code: TN0205A: Bl TN0205AD: Dwl w = Week Code l = Lot Traceability
Order Number: TN0205AD
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM
TN0205A
20 "8 250 200 500 0.
15
TN0205AD
Unit
V
mA
0.
20 (Total) 0.
13 (Total) –55 to 150 W _C
PD TJ, Tstg
0.
10
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70868 S-04279—Rev.
B, 16-Jul-01 www.
vishay.
com
Symbol
RthJA
TN0205A
833
TN0205AD
625 (Total)
Unit
_C/W
11-1
TN0205A/AD
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 5.
0 V, VGS = 2.
5 V VDS = 8.
0 V, VGS = 4.
5 V VGS = 2.
5 V, ID = 150 mA VGS = 4.
5 V, ID = 250 mA Forward Transconductancea Diode Forward Voltage...
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