Power MOSFET - International Rectifier
Description
PD-94031A
IRF7811W
HEXFET® Power MOSFET for DC-DC Converters
• • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses
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1
8 7
A D D D D
2
Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.
The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red, convection, or wave soldering techniques.
Power dissipation of greater than 3W is possible in a typical PCB mount application.
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3
6
4
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T o p V ie w
DEVICE CHARACTERISTICS
IRF7811W RDS(on) QG Qsw Qoss 9.
0mΩ 18nC 5.
5nC 12nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.
5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RθJA RθJL Max.
40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 90°C IDM PD Symbol VDS VGS ID IRF7811W 30 ±12 14 13 109 3.
1 3.
0 –55 to 150 3.
8 109 °C A W A Units V
3/13/01
IRF7811W
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.
0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss – – –
(off)
Min 30
Typ – 9.
0
Max – 12
Units V mΩ V
Conditions VGS = 0V, ID = 250µA VGS = 4.
5V, ID = 15A VDS...
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