FETKY MOSFET - International Rectifier
Description
PD-94079
IRF7807VD2
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications.
HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics.
The SO8 package is designed for vapor phase, infrared or wave soldering techniques.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.
5V) Pulsed Drain CurrentQ Power DissipationS Schottky and Body Diode Average ForwardCurrentT 25°C 70°C 25°C 70°C TJ, TSTG IF (AV) 25°C 70°C IDM PD Symbol VDS VGS ID Max.
30 ±20 8.
3 6.
6 66 2.
5 1.
6 3.
7 2.
3 –55 to 150 °C W A A Units V
A/S A/S A/S G
1 8
K/D K/D K/D K/D D
2
7
3
6
4
5
SO-8
Top View
DEVICE CHARACTERISTICS U IRF7807VD2 RDS(on) QG Qsw Qoss 17mΩ 9.
5nC 3.
4nC 12nC
Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead
RθJA RθJL
Max.
50 20
Units °C/W °C/W
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03/05/01
IRF7807VD2
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.
0 50 6.
0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf
(off)
Min 30
Typ – 17
Max – 25
Units V mΩ V µA mA nA
Conditions VGS = 0V, ID = 250µA VGS...
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