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IRF7606

International Rectifier
Part Number IRF7606
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1264C IRF7606 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSF...
Datasheet PDF File IRF7606 PDF File

IRF7606
IRF7606

Overview
PD - 9.
1264C IRF7606 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (<1.
1mm) Available in Tape & Reel Fast Switching S S S G 1 8 7 A D D D D 2 VDSS = -30V RDS(on) = 0.
09Ω 3 6 4 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 p...


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