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IRF7509

International Rectifier
Part Number IRF7509
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 91270J IRF7509 HEXFET® Power MOSFET q q q q q q q Generation V Technology Ultra Low On-Resistance Dual N and P Ch...
Datasheet PDF File IRF7509 PDF File

IRF7509
IRF7509

Overview
PD - 91270J IRF7509 HEXFET® Power MOSFET q q q q q q q Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.
1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 D1 D1 D2 D2 N-Ch P-Ch 2 7 3 6 VDSS 30V -30V 4 5 P -C HANNE L M O S F E T T op V ie w RDS(on) 0.
11Ω 0.
20Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an...


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