DatasheetsPDF.com

IRF7468

International Rectifier
Part Number IRF7468
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93914D SMPS MOSFET IRF7468 HEXFET® Power MOSFET RDS(on) max(mΩ) 15.5@VGS = 10V Applications High Frequency Isola...
Datasheet PDF File IRF7468 PDF File

IRF7468
IRF7468

Overview
PD - 93914D SMPS MOSFET IRF7468 HEXFET® Power MOSFET RDS(on) max(mΩ) 15.
5@VGS = 10V Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l VDSS 40V ID 9.
4A Benefits l l l S S S G 1 8 7 A A D D D D 2 Ultra-Low Gate Impedance Very Low RDS(on) at 4.
5V VGS Fully Characterized Avalanche Voltage and Current 3 6 4 5 SO-8 T o p V ie w Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max.
40 ± 12 9.
4 7.
5 75 2.
5 1.
6 0.
02 -55 to + 150 Units V V A W W mW/°C °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ.
––– ––– Max.
20 50 Units °C/W Notes  through … are on page 8 www.
irf.
com 1 3/25/01 IRF7468 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min.
40 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.
8 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ.
––– 0.
025 11.
7 13.
0 18.
0 ––– ––– ––– ––– ––– Max.
Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 15.
5 VGS = 10V, ID = 9.
4A „ 17.
0 mΩ VGS = 4.
5V, ID = 7.
5A „ 35.
0 VGS = 4.
5V, ID = 4.
7A „ 2.
0 V VDS = VGS, ID = 250µA 20 VDS = 32V, VGS = 0V µA 100 VDS = 32V, VGS = 0V, T J = 125°C 200 VGS = 12V nA -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total G...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)