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IRF740S

STMicroelectronics
Part Number IRF740S
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description ® IRF740S N - CHANNEL 400V - 0.48 Ω - 10 A - D2PAK PowerMESH™ MOSFET TYPE IRF740S s s s s s s V DSS 400 V R DS(on) <...
Datasheet PDF File IRF740S PDF File

IRF740S
IRF740S

Overview
® IRF740S N - CHANNEL 400V - 0.
48 Ω - 10 A - D2PAK PowerMESH™ MOSFET TYPE IRF740S s s s s s s V DSS 400 V R DS(on) < 0.
55 Ω ID 10 A TYPICAL RDS(on) = 0.
48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 D2PAK TO-263 (Suffix ”T4”) DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) ...


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