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IRF7343

Part Number	IRF7343
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Apr 16, 2005
Detailed Description	PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel ...
Datasheet	IRF7343 PDF File

Overview

PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 D1 D2 D2 N-Ch VDSS 55V P-Ch -55V 3 4 6 5 P -C H A N N E L M O S F E T Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The...

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