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IRF7319

International Rectifier
Part Number IRF7319
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1606A PRELIMINARY l l l l l IRF7319 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resi...
Datasheet PDF File IRF7319 PDF File

IRF7319
IRF7319

Overview
PD - 9.
1606A PRELIMINARY l l l l l IRF7319 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N E L M O S F E T 1 8 N-Ch V DSS 30V P-Ch -30V 2 7 3 6 4 5 P -C H A N N E L M O S FE T RDS(on) 0.
029Ω 0.
058Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for ...


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