Power MOSFET - International Rectifier
Description
PD - 93997
IRF5806
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel
VDSS
-20V
RDS(on) max
86mΩ@VGS = -4.
5V 147mΩ@VGS = -2.
5V
ID
-4.
0A -3.
0A
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
D
1 6
A D
D
2
5
D
G
3
4
S
T o p V ie w
Micro6™
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -4.
0 -3.
3 -16.
5 2.
0 1.
3 0.
02 ± 20 -55 to + 150
Units
V A W W W/°C V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
62.
5
Units
°C/W
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1
10/04/00
IRF5806
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min.
-20 ––– ––– ––– -0.
45 6.
4 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ.
––– 0.
011 47.
1 67.
5 ––– ––– ––– ––– –––...
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