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IRF5805

International Rectifier

Power MOSFET - International Rectifier


IRF5805
IRF5805

PDF File IRF5805 PDF File



Description
PD -94029 IRF5805 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -30V RDS(on) max 0.
098@VGS = -10V 0.
165@VGS = -4.
5V ID -3.
8A -3.
0A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board space is at a premium.
It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
D 1 6 A D D 2 5 D G 3 4 S T o p V ie w TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-30 -3.
8 -3.
0 -15 2 1.
28 0.
02 ± 20 -55 to + 150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max.
62.
5 Units °C/W www.
irf.
com 1 11/6/00 IRF5805 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitan...



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