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IRF520VL

International Rectifier
Part Number IRF520VL
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 94306 HEXFET® Power MOSFET l l l l l l l IRF520VS IRF520VL VDSS = 100V Advanced Process Technology Ultra Low On-...
Datasheet PDF File IRF520VL PDF File

IRF520VL
IRF520VL


Overview
PD - 94306 HEXFET® Power MOSFET l l l l l l l IRF520VS IRF520VL VDSS = 100V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D RDS(on) = 0.
165Ω G S ID = 9.
6A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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