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IRF3710S

Part Number	IRF3710S
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Apr 16, 2005
Detailed Description	IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operatin...
Datasheet	IRF3710S PDF File

Overview

IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power pac...

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